1 edition 1.7 december 1999 FLL1200IU-2 l-band medium & high power gaas fet description the FLL1200IU-2 is a 120 watt gaas fet that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power l-band amplifiers. this product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. this new product is uniquely suited for use in pcs/pcn base station amplifiers as it offers high gain, long term reliability and ease of use. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ? push-pull configuration ? high power output: 120w (typ.) ?high pae: 44%. ?broad frequency range: 1800 to 2000 mhz. ?suitable for class ab operation. parameter drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds tc = 25 c v v w c c v gs p t t stg t ch condition 187.5 -65 to +175 +175 -5 15 rating unit absolute maximum ratings (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 12 volts. 2. the forward and reverse gate currents should not exceed 156.0 and -57.6 ma respectively with gate resistance of 10 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. item drain current transconductance pinch-off voltage gate-source breakdown voltage output power linear gain power-added efficiency thermal resistance symbol i dss v gso -24 - -4872 -1.0 -2.0 -3.5 -5 - - 49.8 50.8 - 10.0 11.0 - - 44 - - 0.6 0.8 v ds = 5v, v gs = 0v v ds = 5v, i ds = 28.8a v ds = 5v, i ds = 2.88a i gs = -2.88ma channel to case v ds = 12v f=1.96 ghz i ds = 5.0a pin = 41.0dbm a s v db dbm v c/w % gm v p p out gl add drain current - 20 30 a i dsr r th conditions unit limits typ. max. min. electrical characteristics (ambient temperature ta=25 c) case style: iu
2 FLL1200IU-2 l-band medium & high power gaas fet v ds = 12v i ds = 5.0a f = 1.96ghz output power & add vs. input power 24 26 28 30 32 34 36 38 40 42 40 42 34 36 38 44 46 48 50 52 54 30 40 0 10 20 50 input power (dbm) output power (dbm) add (%) p out add v ds = 12v i ds = 5a output power vs. frequency 1.87 1.90 1.93 1.96 1.99 2.02 2.05 22dbm 26dbm 30dbm 34dbm 36dbm 38dbm 40dbm pin=42dbm 30 32 34 36 38 40 42 44 46 48 50 52 frequency (ghz) output power (dbm) power derating curve 100 150 200 50 0 0 50 100 150 200 ambient temperature ( c) total power dissipation (mw)
3 FLL1200IU-2 l-band medium & high power gaas fet s-parameters v ds = 12v, i ds = 2.5a frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1000 .927 170.0 .410 47.9 .005 39.5 .929 170.6 1100 .926 168.8 .432 42.6 .006 38.5 .920 169.8 1200 .922 167.2 .470 35.7 .006 37.8 .917 168.7 1300 .909 165.5 .526 28.6 .007 32.2 .911 167.8 1400 .893 163.7 .614 19.7 .009 24.7 .907 166.9 1500 .864 161.7 .738 7.5 .010 15.1 .905 166.0 1600 .821 160.4 .895 -8.4 .011 1.8 .914 164.8 1700 .765 160.1 1.084 -28.3 .012 -18.0 .928 163.5 1800 .717 163.3 1.268 -54.0 .012 -46.9 .940 160.2 1900 .722 168.6 1.353 -81.1 .011 -82.5 .932 155.8 2000 .786 170.8 1.320 -108.9 .009 -126.8 .886 151.6 2100 .857 168.7 1.174 -134.3 .008 -175.5 .821 148.8 2200 .904 164.3 1.006 -156.4 .009 144.7 .766 147.6 2300 .929 158.9 .871 -174.7 .010 114.2 .728 147.3 2400 .943 153.3 .751 169.0 .013 94.5 .700 146.9 2500 .946 148.4 .690 158.3 .015 78.5 .683 145.8 2600 .938 140.8 .653 144.8 .018 67.6 .662 144.2 2700 .933 131.3 .647 130.6 .021 54.6 .644 141.4 2800 .918 119.4 .634 113.5 .025 47.4 .620 136.9 2900 .903 104.1 .634 97.3 .030 31.7 .591 131.2 3000 .881 83.0 .558 79.7 .037 18.8 .553 123.4 note: this s-parameter data shows measurements performed on a single-ended push-pull fet. these parameters should be used to determine the calculated push-pull s-parameter amplifier designs. v ds = 12v i ds = 5.0a f = 1.96ghz ? f = 1.0mhz 2-tone test output power vs. imd 32 34 36 38 40 42 44 46 48 -44 -40 -56 -60 -52 -48 -36 -32 -28 -24 total output power (dbm) imd (dbc) im3 im5
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution do not put these products into the mouth. do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL1200IU-2 l-band medium & high power gaas fet case style "iu" 8.0 0.15 (0.315) 15.5 0.15 (0.610) 2.0 min. 2.0 min. 17.4 0.15 (0.685) 0.7 0.2 4-r1.3 12-r0.5 10.0 0.2 (0.393) 23.9 0.25 (0.941) 34.0 0.25 (1.339) 30.4 0.25 (1.181) 2.4 0.15 (0.094) 1.9 0.15 (0.075) 4.5 max. (0.177) 0.1 (0.004) 2.0 (0.078) 2 1 4 5 3 6 unit: mm (inches) 1, 2: gate 3: source 4, 5: drain 6: source
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